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Si4908DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
40
40
- 4.6
V
mV/°C
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.8
2.2
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 16 V
V DS = 40 V, V GS = 0 V
V DS = 40 V, V GS = 0 V, T J = 55 °C
V DS = 5 V, V GS = 10 V
20
100
1
10
nA
μA
A
Drain-Source On-State Resistance b
Forward Transconductance b
R DS(on)
g fs
V GS = 10 V, I D = 4.1 A
V GS = 4.5 V, I D = 3.8 A
V DS = 15 V, I D = 4.1 A
0.048
0.056
15
0.060
0.070
Ω
S
Dynamic
a
Input Capacitance
C iss
355
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 20 V, V GS = 0 V, I D = 1 MHz
50
29
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 20 V, V GS = 10 V, I D = 5 A
V DS = 20 V, V GS = 4.5 V, I D = 5 A
8
3.7
1.1
12
6
nC
Gate-Drain Charge
Q gd
1.4
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
R g
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = 20 V, R L = 4 Ω
I D ? 1 A, V GEN = 10 V, R g = 1 Ω
V DD = 20 V, R L =4 Ω
I D ? 1 A, V GEN = 4.5 V, R g = 1 Ω
3.4
8
20
23
27
74
95
31
33
5.2
13
30
35
42
110
145
48
50
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
2.3
20
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 1.5 A
I F = 2 A, dI/dt = 100 A/μs, T J = 25 °C
0.8
26
26
13
13
1.2
40
40
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73698
S09-0540-Rev. B, 06-Apr-09
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